Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/78522
Title: A 2-D nonlinear ambipolar diffusion equation model of an IGBT and its numerical solution methodology
Authors: Chen, JJ
Yang, JQ
Yang, SY
Ho, SL 
Ren, ZX
Issue Date: 2018
Source: IEEE transactions on magnetics, Mar. 2018, v. 54, no. 3, 7001304
Abstract: To consider the nonlinear and 2-D characteristics of the carriers in the draft region of a planar-gate insulated-gate bipolar transistor, which are not properly modeled in the existing physics-based IGBT models, a 2-D ambipolar diffusion equation model is proposed and solved using the finite-element method. Moreover, a numerically iterative procedure is introduced to simply and efficiently solve the 2-D nonlinear finite-element equations. The numerical results of the transient performances obtained using the proposed model and solution methodology show a good agreement with those of the experiment ones, showing the high accuracy and feasibility of the proposed model and method.
Keywords: Ambipolar diffusion equation (ADE)
Insulated-gate bipolar transistor (IGBT)
Transient behavior
Publisher: Institute of Electrical and Electronics Engineers
Journal: IEEE transactions on magnetics 
ISSN: 0018-9464
EISSN: 1941-0069
DOI: 10.1109/TMAG.2017.2771339
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