Please use this identifier to cite or link to this item:
Title: A 2-D nonlinear ambipolar diffusion equation model of an IGBT and its numerical solution methodology
Authors: Chen, JJ
Yang, JQ
Yang, SY
Ho, SL 
Ren, ZX
Issue Date: 2018
Source: IEEE transactions on magnetics, Mar. 2018, v. 54, no. 3, 7001304
Abstract: To consider the nonlinear and 2-D characteristics of the carriers in the draft region of a planar-gate insulated-gate bipolar transistor, which are not properly modeled in the existing physics-based IGBT models, a 2-D ambipolar diffusion equation model is proposed and solved using the finite-element method. Moreover, a numerically iterative procedure is introduced to simply and efficiently solve the 2-D nonlinear finite-element equations. The numerical results of the transient performances obtained using the proposed model and solution methodology show a good agreement with those of the experiment ones, showing the high accuracy and feasibility of the proposed model and method.
Keywords: Ambipolar diffusion equation (ADE)
Insulated-gate bipolar transistor (IGBT)
Transient behavior
Publisher: Institute of Electrical and Electronics Engineers
Journal: IEEE transactions on magnetics 
ISSN: 0018-9464
EISSN: 1941-0069
DOI: 10.1109/TMAG.2017.2771339
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

Last Week
Last month
Citations as of Jul 14, 2020

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.