Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/78363
Title: Effects of gate electron concentration on the performance of pentacene organic thin-film transistors
Authors: Ma, YX
Han, CY
Tang, WM 
Lai, PT
Keywords: Organic thin-film transistor
NdTaON
Gate electron concentration
Phonon scattering
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE electron device letters, July 2018, v. 39, no. 7, p. 963-966 How to cite?
Journal: IEEE electron device letters 
Abstract: Bottom-gated pentacene organic thin-film transistors (OTFTs) with NdTaON as high-k gate dielectric have been fabricated on substrates with different resistivities: 0.005 Omega.cm, 0.3 similar to 0.9 Omega.cm, and 1 similar to 5 Omega.cm for n-Si wafers, and 35 Omega/sq for ITO-coated glass. On the three n-Si substrates, the dielectric surface roughness and pentacene grain size are nearly the same, but the carrier mobility of the OTFTs show an obvious increase with decreasing resistivity, indicating that the gate electron concentration can affect the device performance. Despite the much larger dielectric surface roughness and smaller pentacene grain size, the OTFT on the ITO-coated glass shows the highest carrier mobility. These effects are attributed to remote phonon scattering on the channel carriers, which has been strongly screened by the electrons in the gate electrode. According to the measurement on the mobility degradation at high temperature, the remote phonon scattering is determined to be the dominant factor affecting the carrier mobility. As a result, the OTFT on ITO glass can achieve a high carrier mobility of 2.43 cm(2)/V.s and a small threshold voltage of -0.10 V.
URI: http://hdl.handle.net/10397/78363
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2832220
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