Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77630
Title: Low-voltage, optoelectronic CH3NH3PbI3− xClx memory with integrated sensing and logic operations
Authors: Zhou, F 
Liu, Y 
Shen, X 
Wang, M 
Yuan, F 
Chai, Y 
Keywords: Coincidence detection
Logic operations
Optoelectronic memory
Perovskite
Resistive switching memory
Issue Date: 2018
Publisher: Wiley-VCH
Source: Advanced functional materials, 2018, v. 28, no. 15, 1800080 How to cite?
Journal: Advanced functional materials 
Abstract: Nonvolatile optoelectronic memories integrated with the functions of sensing, data storage, and data processing are promising for the potential Internet of things (IoT) applications. To meet the requirements of IoT devices, multifunctional memory devices with low power consumption and secure data storage are highly desirable. This study demonstrates an optoelectronic resistive switching memory integrated with sensing and logic operations by adopting organic–inorganic hybrid CH3NH3PbI3− xClx perovskites, which possess unusual defect physics and excellent light absorption. The CH3NH3PbI3− xClx cell exhibits low operation voltage of 0.1 V with the assistance of light illumination, long-term retention property, and multiple resistance states. Its unique optoelectronic characteristics enable to perform logic operation for inputting one electrical pulse and one optical signal, and detect the coincidence of electrical and optical signal as well. This design provides possibilities for smart sensor in IoT application.
URI: http://hdl.handle.net/10397/77630
ISSN: 1616-301X
EISSN: 1616-3028
DOI: 10.1002/adfm.201800080
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