Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77546
Title: Effects of Metal-Hydroxyl and InOx Defects on performance of InGaZnO thin-film transistor
Authors: Huang, XD
Ma, Y
Song, JQ
Lai, PT
Tang, WM 
Keywords: InGaZnO (IGZO)
InO
Metal-hydroxyl (M-OH)
Postmetallization annealing (PMA)
Thin-film transistor (TFT)
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2018, v. 65, no. 3, p. 1009-1013 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: The properties of metal-hydroxyl (M-OH) and InOx defects in InGaZnO (IGZO) and their influences on the performance of IGZO thin-film transistor (TFT) are investigated. The defects in the IGZO film are intentionally modulated by using various postmetallization-Annealing (PMA) treatments. PMA is effective to densify the IGZO film and thus suppress the formation of M-OH. On the other hand, the PMA also leads to the formation of InOx near the edge of conduction channel. It is found that M-OH acts as deep-level acceptor like trap and has a heavy influence on the off-current, threshold voltage, and subthreshold swing of the TFT. On the other hand, InOx acts as shallow-level donor and mainly affects the carrier mobility of the TFT. The effects of M-OH and InOx on the TFT performance decrease and increase, respectively, with decreasing the channel length.
URI: http://hdl.handle.net/10397/77546
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2018.2797073
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