Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77540
Title: A study on organic thin-film transistors using Hf-La oxides with different Ia contents as gate dielectrics
Authors: Han, CY
Ma, YX 
Tang, WM
Wang, XL
Lai, PT
Keywords: Hf-La oxide
Highκ dielectric
Hysteresis
Organic thin-film transistor (OTFT)
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2018, v. 65, no. 3, p. 1107-1112 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: The effects of La content in HfLaO gate dielectric on the performance of pentacene organic thin-film transistor (OTFT) fabricated on Si have been studied. The OTFT with Hf0.103La0.897Oy gate dielectric shows high performance such as high carrier mobility of 3.45 cm2 V1. s1 (132 times and 40 times higher than those of devices using Hf oxide and La oxide, respectively), small threshold voltage of-2.09 V, and negligible hysteresis of-0.029 V. Binding-energy shift of Hf 4f peak in the X-ray photoelectron spectroscopy spectrum indicates that La incorporation can passivate the oxygen vacancies in HfO2. Atomic force microscope reveals that the La incorporation can reduce the surface roughness of the gate dielectric by suppressing the crystallization of HfO2. Therefore, by using Hf0.103La0.897Oy as gate dielectric, OTFT with high carrier mobility and small threshold voltage can be obtained.
URI: http://hdl.handle.net/10397/77540
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2018.2797428
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