Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77473
Title: A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor
Authors: Yin, C
Wang, X
Chen, Y
Li, D
Lin, T
Sun, S
Shen, H
Du, P
Sun, J
Meng, X
Chu, J
Wong, HF 
Leung, CW 
Wang, Z
Wang, J
Issue Date: 2018
Publisher: Royal Society of Chemistry
Source: Nanoscale, 2018, v. 10, no. 4, p. 1727-1734 How to cite?
Journal: Nanoscale 
Abstract: WSe2 has attracted extensive attention for p-FETs due to its air stability and high mobility. However, the Fermi level of WSe2 is close to the middle of the band gap, which will induce a high contact resistance with metals and thus limit the field effect mobility. In this case, a high work voltage is always required to achieve a large ON/OFF ratio. Herein, a stable WSe2 p-doping technique of coating using a ferroelectric relaxor polymer P(VDF-TrFE-CFE) is proposed. Unlike other doping methods, P(VDF-TrFE-CFE) not only can modify the Fermi level of WSe2 but can also act as a high-k gate dielectric in an FET. Dramatic enhancement of the field effect hole mobility from 27 to 170 cm2 V-1 s-1 on a six-layer WSe2 FET has been achieved. Moreover, an FET device based on bilayer WSe2 with P(VDF-TrFE-CFE) as the top gate dielectric is fabricated, which exhibits high p-type performance over a low top gate voltage range. Furthermore, low-temperature experiments reveal the influence of the phase transition of P(VDF-TrFE-CFE) on the channel carrier density and mobility. With a decrease in temperature, field effect hole mobility increases and approaches up to 900 cm2 V-1 s-1 at 200 K. The combination of the p-doping and gating with P(VDF-TrFE-CFE) provides a promising solution for obtaining high-performance p-FET with 2D semiconductors.
URI: http://hdl.handle.net/10397/77473
ISSN: 2040-3364
EISSN: 2040-3372
DOI: 10.1039/c7nr08034d
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