Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77317
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorFu, YM-
dc.creatorLiu, YH-
dc.creatorZhu, LQ-
dc.creatorXiao, H-
dc.creatorSong, AR-
dc.date.accessioned2018-07-30T08:27:32Z-
dc.date.available2018-07-30T08:27:32Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/77317-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.titlePseudo-diode based on protonic/electronic hybrid oxide transistoren_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume123-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.5012966-
dcterms.abstractCurrent rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ∼4 and ∼50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ∼-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.-
dcterms.bibliographicCitationJournal of applied physics, 2018, v. 123, no. 225304-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2018-
dc.identifier.scopus2-s2.0-85040441975-
dc.identifier.eissn1089-7550-
dc.identifier.artn25304-
dc.description.validate201807 bcrc-
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