Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77317
Title: Pseudo-diode based on protonic/electronic hybrid oxide transistor
Authors: Fu, YM
Liu, YH 
Zhu, LQ
Xiao, H
Song, AR
Issue Date: 2018
Publisher: American Institute of Physics
Source: Journal of applied physics, 2018, v. 123, no. 225304 How to cite?
Journal: Journal of applied physics 
Abstract: Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ∼4 and ∼50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ∼-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.
URI: http://hdl.handle.net/10397/77317
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.5012966
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