Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/77261
Title: High-performance pentacene organic thin-film transistor by using Nd2O3 gate dielectric doped with Nb
Authors: Ma, Y
Tang, WM 
Han, C
Lai, PT
Keywords: High-k
NdNbO
Pentacene organic thin-film transistors
Issue Date: 2018
Publisher: Wiley-VCH
Source: Physica status solidi. A, Applications and materials science, 2018, v. 215, no. 51700609 How to cite?
Journal: Physica status solidi. A, Applications and materials science 
Abstract: Pentacene organic thin-film transistors (OTFTs) using high-k NdxNb(1−x)O gate dielectric with different Nb contents (x = 1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x = 0.950, achieving a high carrier mobility of 1.95 cm2 V−1 s−1, small threshold voltage of −1.57 V, small sub-threshold swing of 0.13 V dec−1, and small hysteresis of 0.13 V. Atomic force microscopy and X-ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor-like traps associated with the hydroxide formed in Nd2O3 after absorbing moisture and also acceptor-like traps (in the form of oxygen vacancies) induced by Nb incorporation.
URI: http://hdl.handle.net/10397/77261
ISSN: 1862-6300
EISSN: 1862-6319
DOI: 10.1002/pssa.201700609
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