Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/7713
Title: Growth behavior of ZnO nanowires on Au-seeded SiO2-GaN co-substrate by vapor transport and deposition
Authors: Xu, CH
You, YF
Wang, JZ
Ge, SF
Fong, WK
Leung, K
Surya, C 
Keywords: Amorphous SiO2
Crystal growth
Crystalline GaN
Vapor transport and deposition
ZnO nanowires
Issue Date: 2013
Source: Superlattices and microstructures, 2013, v. 61, p. 97-105 How to cite?
Journal: Superlattices and Microstructures 
Abstract: Au-seeded amorphous SiO2 layer with crystalline GaN dot windows was fabricated on c-plane sapphire wafer. In order to compare the growth of ZnO nanostructures on amorphous SiO2 with that on crystalline GaN directly, the Au-seeded SiO2-GaN co-substrates were used for the growth of ZnO nanowires by the vapor transport and deposition (VTD) technique. As-prepared ZnO nanowires were characterized by a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results show that there is an Au particle on the grown ZnO nanowire and the formation of ZnO nanowire on crystalline GaN is easier than that on amorphous SiO2. The experimental results were explained by the change of Zn contents in an Au-Zn droplet with the co-substrate positions during VTD process and ZnO epitaxial growth.
URI: http://hdl.handle.net/10397/7713
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2013.06.015
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