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Title: Doping, contact and interface engineering of two-dimensional layered transition metal dichalcogenides transistors
Authors: Zhao, YD 
Xu, K 
Pan, F 
Zhou, CJ 
Zhou, FC 
Chai, Y 
Issue Date: 2017
Publisher: Wiley-VCH
Source: Advanced functional materials, 2017, v. 27, no. 19, , special issue SI, 1603484 How to cite?
Journal: Advanced functional materials 
Abstract: Owing to an ultrathin body, atomic scale smoothness, dangling bond-free surface, and sizable bandgap, transistors based on two-dimensional (2D) layered semiconductors show the potential of scalability down to the nanoscale, high-density three-dimensional integration, and superior performance in terms of better electrostatic control and smaller power consumption compared with conventional three-dimensional semiconductors (Si, Ge, and III-V compound materials). To apply 2D layered materials into complementary metal-oxide-semiconductor logic circuits, it is important to modulate the carrier type and density in a controllable manner, and engineer the contact (between metal electrode and 2D semiconductor) and the interface (between dielectrics and semiconducting channel) to get close to their intrinsic carrier mobility. In this review, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD-based field-effect transistors is provided.
Description: 2nd International Conference on Two-Dimensional Layered Materials, Hong Kong, People's Republic of China, Jan 07-09, 2016
ISSN: 1616-301X
EISSN: 1616-3028
DOI: 10.1002/adfm.201603484
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