Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/76362
Title: Doping, contact and interface engineering of two-dimensional layered transition metal dichalcogenides transistors
Authors: Zhao, YD 
Xu, K 
Pan, F 
Zhou, CJ 
Zhou, FC 
Chai, Y 
Issue Date: 2017
Publisher: Wiley-VCH
Source: Advanced functional materials, 2017, v. 27, no. 19, , special issue SI, 1603484 How to cite?
Journal: Advanced functional materials 
Abstract: Owing to an ultrathin body, atomic scale smoothness, dangling bond-free surface, and sizable bandgap, transistors based on two-dimensional (2D) layered semiconductors show the potential of scalability down to the nanoscale, high-density three-dimensional integration, and superior performance in terms of better electrostatic control and smaller power consumption compared with conventional three-dimensional semiconductors (Si, Ge, and III-V compound materials). To apply 2D layered materials into complementary metal-oxide-semiconductor logic circuits, it is important to modulate the carrier type and density in a controllable manner, and engineer the contact (between metal electrode and 2D semiconductor) and the interface (between dielectrics and semiconducting channel) to get close to their intrinsic carrier mobility. In this review, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD-based field-effect transistors is provided.
Description: 2nd International Conference on Two-Dimensional Layered Materials, Hong Kong, People's Republic of China, Jan 07-09, 2016
URI: http://hdl.handle.net/10397/76362
ISSN: 1616-301X
EISSN: 1616-3028
DOI: 10.1002/adfm.201603484
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

24
Citations as of Nov 13, 2018

WEB OF SCIENCETM
Citations

20
Last Week
0
Last month
Citations as of Oct 20, 2018

Page view(s)

16
Last Week
1
Last month
Citations as of Nov 11, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.