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Title: Effects of zirconium doping on the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of lead-free 0.67BiFe(0.97)Ga(0.03)O(3)-0.33BaTi(1-x) Zr (x) O-3 ceramics
Authors: Qin, M
Yan, JM
Wang, FF
Liu, YK 
Zheng, RK
Issue Date: 2017
Publisher: Springer
Source: Journal of materials science : materials in electronics, 2017, v. 28, no. 14, p. 10212-10217 How to cite?
Journal: Journal of materials science : materials in electronics 
Abstract: Here we report the structural, dielectric, ferroelectric, piezoelectric, and magnetic properties of zirconium-doped 0.67BiFe(0.97)Ga(0.03)O(3)-0.33BaZr (x) Ti1-x O-3 (BFG-BZT) lead-free ceramics. Structural investigations reveal that the doped Zr4+ ions (up to x = 0.15) can be fully incorporated into the host lattice. Dielectric measurements demonstrate that with increasing Zr4+ content, both the ferroelectric Curie temperature T (C) and the dielectric constant decrease monotonously, and that the dielectric constant exhibits relaxor behaviors upon Zr4+ doping. At the same time, the remnant polarization P (r) increases and then decreases, with the maximum P (r) similar to 26 A mu C/cm(2) for x = 0.025. One of the noteworthy results is that the remanent magnetic moment at room temperature increases up to 0.17 emu/g with increasing x from 0 to 0.15, which is attributed to enhanced lattice distortions due to Zr4+ doping. The coexistence of strong ferroelectricity and ferromagnetism at room temperature implies that the BFG-BZT could be potential candidate materials for multiferroic device applications.
ISSN: 0957-4522
EISSN: 1573-482X
DOI: 10.1007/s10854-017-6787-8
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