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Title: vFlash : virtualized flash for optimizing the I/O performance in mobile devices
Authors: Chen, RH
Wang, Y
Hu, JT
Liu, D
Shao, ZL 
Guan, Y
Keywords: Applications
Cross layer
I/O behaviors
Nonvolatile memory (NVM)
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on computer-aided design of integrated circuits and systems, 2017, v. 36, no. 7, p. 1203-1214 How to cite?
Journal: IEEE transactions on computer-aided design of integrated circuits and systems 
Abstract: I/O is becoming one of major performance bottlenecks in NAND-flash-based mobile devices. Novel nonvolatile memories (NVMs), such as phase change memory and spin-transfer torque random access memory, can provide fast read/write operations. In this paper, we propose a unified NVM/flash architecture to improve the I/O performance. A transparent scheme, virtualized flash (vFlash), is also proposed to manage the unified architecture. Within vFlash, interapp and intra-app techniques are proposed to optimize the application performance by exploiting the historical locality and I/O access patterns of applications. Since vFlash is on the bottom of the I/O stack, the application features will be lost. Therefore, we also propose a cross-layer technique to transfer the application information from the application layer to the vFlash layer. The proposed scheme is evaluated based on an Android platform, and the experimental results show that the proposed scheme can effectively improve the I/O performance of mobile devices.
ISSN: 0278-0070
EISSN: 1937-4151
DOI: 10.1109/TCAD.2016.2618881
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