Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/76157
Title: Few-layered ptS2 phototransistor on h-BN with high gain
Authors: Li, L
Wang, WK
Chai, Y 
Li, HQ
Tian, ML
Zhai, TY
Keywords: PtS2
Photocurrent generation mechanisms
Photogain
Phototransistors
Transition metal dichalcogenides
Issue Date: 2017
Publisher: Wiley-VCH
Source: Advanced functional materials, 2017, v. 27, no. 27, 1701011 How to cite?
Journal: Advanced functional materials 
Abstract: The very recently rediscovered group-10 transition metal dichalcogenides (TMDs) such as PtS2 and PtSe2, have joined the 2D material family as potentially promising candidates for electronic and optoeletronic applications due to their theoretically high carrier mobility, widely tunable bandgap, and ultrastability. Here, the first exploration of optoelectronic application based on few-layered PtS2 using h-BN as substrate is presented. The phototransistor exhibits high responsivity up to 1.56 x 10(3) A W-1 and detectivity of 2.9 x 10(11) Jones. Additionally, an ultrahigh photogain approximate to 2 x 10(6) is obtained at a gate voltage V-g = 30 V, one of the highest gain among 2D photodetectors, which is attributed to the existence of trap states. More interestingly, the few-layered PtS2 phototransistor shows a back gate modulated photocurrent generation mechanism, that is, from the photoconductive effect dominant to photogating effect dominant via tuning the gate voltage from the OFF state to the ON state. Such good properties combined with gate-controlled photoresponse of PtS2 make it a competitive candidate for future 2D optoelectronic applications.
URI: http://hdl.handle.net/10397/76157
ISSN: 1616-301X
EISSN: 1616-3028
DOI: 10.1002/adfm.201701011
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