Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/76144
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Huang, Y | - |
dc.creator | Xu, JP | - |
dc.creator | Liu, L | - |
dc.creator | Cheng, ZX | - |
dc.creator | Lai, PT | - |
dc.creator | Tang, WM | - |
dc.date.accessioned | 2018-05-10T02:55:26Z | - |
dc.date.available | 2018-05-10T02:55:26Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/76144 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2017 Author(s). | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Huang et al., Appl. Phys. Lett. 111, 53501 (2017) and may be found at https://dx.doi.org/10.1063/1.4996722 | en_US |
dc.title | Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 111 | - |
dc.identifier.issue | 5 | - |
dc.identifier.doi | 10.1063/1.4996722 | - |
dcterms.abstract | A Ge metal-oxide-semiconductor capacitor with a composite gate dielectric composed of a ZrON/TaON multilayer and a Si passivation layer treated with fluorine plasma is fabricated. Its interfacial and electrical properties are compared with those of its counterparts without the Si passivation layer or the fluorine-plasma treatment. Experimental results show that the device with the fluorinated Si passivation layer exhibits excellent interfacial and electrical performances: low interface-state density (2.0 x 10(11) cm(2) eV(-1) at midgap), small flatband voltage (0.17 V), low gate leakage current (2.04 x 10(-6) A/cm(2) at Vg = V-g = 1V), and high equivalent dielectric constant (22.6). The involved mechanism lies in the fact that the TaSiON interlayer formed by mixing of TaON and Si passivation layers can effectively suppress the growth of unstable Ge oxides to reduce the defective states at/near the TaSiON/Ge interface. Moreover, the fluorine-plasma treatment can passivate the oxygen vacancies and conduce to the blocking of elemental inter-diffusions, thus largely improving the interfacial quality to achieve excellent electrical properties for the device. Published by AIP Publishing. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 2017, v. 111, no. 5, 53501, p. 053501-1-053501-5 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2017 | - |
dc.identifier.isi | WOS:000406782300021 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.artn | 53501 | - |
dc.description.validate | 201805 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Huang_Interfacial_Electrical_Ge.pdf | 1.33 MB | Adobe PDF | View/Open |
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