Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75960
Title: Improvements of interfacial and electrical properties for Ge MOS capacitor by using TaYON interfacial passivation layer and fluorine incorporation
Authors: Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM 
Keywords: Fluorine-plasma treatment
Ge metal-oxide-semiconductor (MOS)
Interface properties
TaYON passivation layer
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2017, v. 64, no. 9, p. 3528-3533 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: Ge metal-oxide-semiconductor capacitor with HfTiON/TaYON stacked gate dielectric treated by fluorine plasma is fabricated, and its interfacial and electrical properties are compared with its counterparts without the TaYON interfacial passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (2.5 x 10(11) cm(-2)eV(-1)), small flatband voltage (0.34 V), good capacitance-voltage behavior, small frequency dispersion, and low gate leakage current (2.47x10(-5) A/cm(2) at V-g = V-fb + 1 V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate dielectric annealing by the TaYON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the TaYON/Ge interface and improving the electrical properties of the device.
URI: http://hdl.handle.net/10397/75960
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2017.2723886
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.