Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75935
Title: High-performance MoS2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared
Authors: Lou, ZH
Zeng, LH 
Wang, YG
Wu, D
Xu, TT
Shi, ZF
Tian, YT
Li, XJ
Tsang, YH 
Issue Date: 2017
Publisher: Optical Society of America
Source: Optics letters, 2017, v. 42, no. 17, p. 3335-3338 How to cite?
Journal: Optics letters 
Abstract: Polycrystalline 2D layered molybdenum disulfide (MoS2) films were synthesized via a thermal decomposition method. The MoS2/Si heterostructures were constructed in situ by synthesis MoS2 on plane Si substrates. Such MoS2/Si heterostructures exhibited high sensitivity to light illumination with wavelengths ranging from the deep ultraviolet to the near infrared. Photoresponse analysis reveals that a high responsivity of 23.1 A/W, a specific detectivity of 1.63 x 10(12) Jones, and a fast response speed of 21.6/65.5 mu s were achieved. Notably, the MoS2/Si heterojunction photodetector could operate with excellent stability and repeatability over a wide frequency range up to 150 kHz. The high performance could be attributed to the high-quality heterojunction between MoS2 and Si obtained by the in situ fabrication process. Such high performance with broadband response suggests that MoS2/Si heterostructures could have great potential in optoelectronic applications.
URI: http://hdl.handle.net/10397/75935
ISSN: 0146-9592
EISSN: 1539-4794
DOI: 10.1364/OL.42.003335
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