Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/75917
DC Field | Value | Language |
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dc.contributor | Department of Applied Physics | - |
dc.creator | He, DW | - |
dc.creator | Qiao, JS | - |
dc.creator | Zhang, LL | - |
dc.creator | Wang, JY | - |
dc.creator | Lan, T | - |
dc.creator | Qian, J | - |
dc.creator | Li, Y | - |
dc.creator | Shi, Y | - |
dc.creator | Chai, Y | - |
dc.creator | Lan, W | - |
dc.creator | Ono, LK | - |
dc.creator | Qi, YB | - |
dc.creator | Xu, JB | - |
dc.creator | Ji, W | - |
dc.creator | Wang, XR | - |
dc.date.accessioned | 2018-05-10T02:54:56Z | - |
dc.date.available | 2018-05-10T02:54:56Z | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | http://hdl.handle.net/10397/75917 | - |
dc.language.iso | en | en_US |
dc.publisher | American Association for the Advancement of Science (AAAS) | en_US |
dc.rights | Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. | en_US |
dc.rights | This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/), which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. | en_US |
dc.rights | The following publication He, D., Qiao, J., Zhang, L., Wang, J., Lan, T., Qian, J., ... & Wang, X. (2017). Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride. Science advances, 3(9), e1701186 is available at https://doi.org/10.1126/sciadv.1701186 | en_US |
dc.title | Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 3 | - |
dc.identifier.issue | 9 | - |
dc.identifier.doi | 10.1126/sciadv.1701186 | - |
dcterms.abstract | Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1] benzothieno[3,2-b][1] benzothiophene (C8-BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm(2)/Vs, Ohmic contact with 100 Omega circle cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C8-BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Science advances, 2017, v. 3, no. 9, e1701186 | - |
dcterms.isPartOf | Science advances | - |
dcterms.issued | 2017 | - |
dc.identifier.isi | WOS:000411592600011 | - |
dc.identifier.artn | e1701186 | - |
dc.description.validate | 201805 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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He_Ultrahigh_Mobility_Efficient.pdf | 1.46 MB | Adobe PDF | View/Open |
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