Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75906
Title: Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography
Authors: Li, X
Leung, CW 
Chiu, CC
Lin, KW
Chan, MS
Zhou, Y
Pong, PWT
Keywords: Exchange bias
Nanostructures
Nanosphere lithography
Issue Date: 2017
Publisher: North-Holland
Source: Physics letters. Section A : general, atomic and solid state physics, 2017, v. 381, no. 33, p. 2709-2714 How to cite?
Journal: Physics letters. Section A : general, atomic and solid state physics 
Abstract: Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (He) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced He and enhanced Hex are observed after annealing at low temperatures, while high-temperature annealing results in higher He and lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.
URI: http://hdl.handle.net/10397/75906
ISSN: 0375-9601
EISSN: 1873-2429
DOI: 10.1016/j.physleta.2017.06.010
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.