Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75896
Title: Dopant induced impurity bands and carrier concentration control for thermoelectric enhancement in p-type Cr2Ge2Te6
Authors: Tang, XD
Fang, DD
Peng, KL
Yang, DF
Guo, LJ
Lu, X
Dai, JY 
Wang, GY
Liu, HJ
Zhou, XY
Issue Date: 2017
Publisher: American Chemical Society
Source: Chemistry of materials, 2017, v. 29, no. 17, p. 7401-7407 How to cite?
Journal: Chemistry of materials 
Abstract: Our previous work demonstrated that Cr2Ge2Te6 based compounds with a layered structure and high symmetry are good candidates for thermoelectric to, application. However, the power factor of only,0.23 mW/mK(2) in undoped material is much lower than that of conventional thermoelectrics. This indicates the importance of an electronic performance optimization for further improvements. In this work, either Mn- or Fe-substitution on the Cr site is investigated, with expectations of both carrier concentration control and band structure engineering. First principle calculations indicate that an orbital hybridization between d orbitals of the doping atom and the p orbital of Te significantly increases the density of states (DOS) around the Fermi level. In addition, it is found that Mn doping is more favorable to improve the electrical properties than Fe doping. By tuning the carrier concentration via Mn doping, the peak power factor rises rapidly from 0.23 mW/mK(2) to 0.57 mW/mK(2) at 830 K with x = 0.05. Combined with the intrinsic low thermal conductivity, Cr1.9Mn0.1Ge2Te6 displays a decent zT of 0.63 at 833 K, a 2-fold value as compared to that of the undoped sample at the same direction and temperature.
URI: http://hdl.handle.net/10397/75896
ISSN: 0897-4756
EISSN: 1520-5002
DOI: 10.1021/acs.chemmater.7b02346
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