Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75764
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dc.contributorDepartment of Applied Physics-
dc.creatorYan, JM-
dc.creatorGao, GY-
dc.creatorLiu, YK-
dc.creatorWang, FF-
dc.creatorZheng, RK-
dc.date.accessioned2018-05-10T02:54:33Z-
dc.date.available2018-05-10T02:54:33Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/75764-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2017 Author(s).en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. M. Yan et al., J. Appl. Phys. 122, 134102 (2017) and may be found at https://dx.doi.org/10.1063/1.4990513en_US
dc.titleElectric-field control of electronic transport properties and enhanced magnetoresistance in La0.7Sr0.3MnO3/0.5BaZr(0.2)Ti(0.8)O(3)-0.5Ba(0.7)Ca(0.3)TiO(3) lead-free multiferroic structuresen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume122-
dc.identifier.issue13-
dc.identifier.doi10.1063/1.4990513-
dcterms.abstractWe report the fabrication of lead-free multiferroic structures by depositing ferromagnetic La0.7Sr0.3MnO3 (LSMO) polycrystalline films on polished 0.5BaZr(0.2)Ti(0.8)O3-0.5Ba(0.7)Ca(0.3)TiO(3) (BZT-BCT) piezoelectric ceramic substrates. By applying electric fields to the BZT-BCT along the thickness direction, the resistivity of LSMO films can be effectively manipulated via the piezoelectric strain of the BZT-BCT. Moreover, the LSMO polycrystalline films exhibit almost temperature independent and significantly enhanced magnetoresistance (MR) below T-C. At T = 2K and H = 8 T, the MR of polycrystalline films is approximately two orders of magnitude higher than that of LSMO epitaxial films grown on (LaAlO3)(0.3)(SrAl1/2Ta1/2O3)(0.7) single-crystal substrates. The enhanced MR mainly results from the spin-polarized tunneling of charge carriers across grain boundaries. The LSMO/BZT-BCT structures with electric-field controllable modulation of resistivity and enhanced MR effect may have potential applications in low-energy consumption and environmentally friendly electronic devices. Published by AIP Publishing.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 2017, v. 122, no. 13, 134102, p. 134102-1-134102-6-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2017-
dc.identifier.isiWOS:000412328400019-
dc.identifier.scopus2-s2.0-85030570625-
dc.identifier.eissn1089-7550-
dc.identifier.artn134102-
dc.description.validate201805 bcrc-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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