Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75663
Title: Spin-valve junction with transfer-free MoS2 spacer prepared by sputtering
Authors: Wong, WC 
Ng, SM 
Wong, HF 
Mak, CL 
Leung, CW 
Keywords: MoS2
Device fabrication
Spin valve
Transfer free
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on magnetics, 2017, v. 53, no. 11, 1600205 How to cite?
Journal: IEEE transactions on magnetics 
Abstract: The prospects of spintronic devices based on 2-D materials originate from their outstanding spin-related properties. Fabrication of such devices typically involves transfer processes that yield inferior interfaces due to trapped contaminants or cavities at 2-D material/electrode interfaces. Here, we report a transfer-free fabrication process of MoS2 films by RF magnetron sputtering, and demonstrate its application in the La0.7Sr0.3MnO3/MoS2/Ni0.8Fe0.2 spin-valve structure. The Raman spectroscopy shows E-2g and A(1g) vibration modes of MoS2, suggesting the growth of crystalline MoS2 layers. A giant magnetoresistance ratio of 0.8% at 20 K was observed. The results suggest a scalable route for fabricating MoS2-based electronic and spintronic devices with a transfer-free process for obtaining reliable contacts.
Description: IEEE International Magnetics Conference (Intermag), Dublin, Ireland, Apr 24-28, 2017
URI: http://hdl.handle.net/10397/75663
ISSN: 0018-9464
EISSN: 1941-0069
DOI: 10.1109/TMAG.2017.2733004
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