Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75649
Title: Substrate orientation-induced epitaxial growth of face centered cubic Mo2C superconductive thin film
Authors: Zhang, Z 
Zhang, F 
Wang, HC 
Chan, CH 
Lu, W 
Dai, JY 
Issue Date: 2017
Publisher: Royal Society of Chemistry
Source: Journal of materials chemistry C, 2017, v. 5, no. 41, p. 10822-10827 How to cite?
Journal: Journal of materials chemistry C 
Abstract: In this study, we demonstrate the crystal structure-controlled growth of superconductive Mo2C thin films on a sapphire(0001) substrate in the pulsed-laser deposition. Detailed characterizations indicate that the thin film grown at 700 degrees C adopts the face centered cubic structure with the preferred orientation of the < 111 > direction. It was also demonstrated that the sapphire substrate and face centered cubic structured Mo2C thin film have the orientation relationship of {0006} sapphire//{111} Mo2C and [01 (1) over tilde0] sapphire//[1 (1) over bar0] Mo2C due to a small in-plane lattice mismatch between their corresponding lattice spacing perpendicular to the {111} atomic plane of the Mo2C thin film. Electrical transport measurements show that the Mo2C thin films exhibit superconducting characteristics. This study provides a practical approach to controlling the crystal structure of superconductive Mo2C thin films through the optimization of substrate orientation.
URI: http://hdl.handle.net/10397/75649
ISSN: 2050-7526
EISSN: 2050-7534
DOI: 10.1039/c7tc03652c
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