Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/75582
Title: A physics-based compact model for material- and operation-oriented switching behaviors of cBRAM
Authors: Zhao, YD
Hu, JJ
Huang, P
Yuan, F 
Chai, Y 
Liu, XY
Kang, JF
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: 62nd Annual IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, US, Dec 3-7, 2016, UNSP 7.6 How to cite?
Abstract: A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device circuit-system co-design tool.
URI: http://hdl.handle.net/10397/75582
ISBN: 978-1-5090-3902-9
ISSN: 2380-9248
Appears in Collections:Conference Paper

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

1
Citations as of May 11, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.