Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74965
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorDepartment of Electronic and Information Engineeringen_US
dc.contributorDepartment of Electrical Engineeringen_US
dc.creatorSuen, CHen_US
dc.creatorShi, Den_US
dc.creatorSu, Yen_US
dc.creatorZhang, Zen_US
dc.creatorChan, CHen_US
dc.creatorTang, Xen_US
dc.creatorLi, Yen_US
dc.creatorLam, KHen_US
dc.creatorChen, Xen_US
dc.creatorHuang, BLen_US
dc.creatorZhou, XYen_US
dc.creatorDai, JYen_US
dc.date.accessioned2018-03-29T09:34:17Z-
dc.date.available2018-03-29T09:34:17Z-
dc.identifier.issn2352-8478en_US
dc.identifier.urihttp://hdl.handle.net/10397/74965-
dc.language.isoenen_US
dc.publisherChinese Ceramic Societyen_US
dc.rights© 2017 The Chinese Ceramic Society. Production and hosting by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).en_US
dc.rightsThe following publication Suen, C. H., Shi, D., Su, Y., Zhang, Z., Chan, C. H., Tang, X., . . . Dai, J. -. (2017). Enhanced thermoelectric properties of SnSe thin films grown by pulsed laser glancing-angle deposition. Journal of Materiomics, 3(4), 293-298 is available at https://dx.doi.org/10.1016/j.jmat.2017.05.001en_US
dc.subjectGlancing angleen_US
dc.subjectPotential barrier scatteringen_US
dc.subjectSnSeen_US
dc.subjectThermoelectricen_US
dc.titleEnhanced thermoelectric properties of SnSe thin films grown by pulsed laser glancing-angle depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage293en_US
dc.identifier.epage298en_US
dc.identifier.volume3en_US
dc.identifier.issue4en_US
dc.identifier.doi10.1016/j.jmat.2017.05.001en_US
dcterms.abstractSnSe single crystals have been demonstrated to possess excellent thermoelectric properties. In this work, we demonstrate a grain size control method in growing nanocrystalline SnSe thin films through a glancing angle pulsed-laser deposition approach. Structural characterization reveals that the SnSe film deposited at a normal angle has a preferred orientation along a axis, while by contrast, the SnSe film deposited at an 80° glancing angle develops a nanopillar structure with the growth direction towards the incident atomic flux. The glancing angle deposition greatly reduces the grain size of the thin film due to a shadowing effect to the adatoms, resulting in significantly increased power factor for more than 100%. The maximum Seebeck coefficient and power factor are 498.5μV/K and 18.5μWcm−1K−2, respectively. The enhancement of thermoelectric property can be attributed to the potential barrier scattering at grain boundaries owing to the reduced grain size and increased grain boundaries in the film. Given this enhanced power factor, and considering the fact that the nanopillar structure should have much lower thermal conductivity than a plain film, the zT value of such made SnSe film could be significantly larger than the corresponding single crystal film, making it a good candidate for thin film-based thermoelectric device.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of materiomics, Dec, 2017, v. 3, no. 4, p. 293-298en_US
dcterms.isPartOfJournal of materiomicsen_US
dcterms.issued2017-12-
dc.identifier.scopus2-s2.0-85033476082-
dc.identifier.rosgroupid2017002299-
dc.description.ros2017-2018 > Academic research: refereed > Publication in refereed journalen_US
dc.description.validate201803 bcmaen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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