Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74698
Title: Non-volatile memory based page swapping for building high-performance mobile devices
Authors: Liu, D
Zhong, K
Zhu, X
Li, Y
Long, L
Shao, Z 
Keywords: Application relaunching delay
Non-volatile memory
Smartphone
Swapping
Issue Date: 2017
Publisher: IEEE Computer Society
Source: IEEE transactions on computers, 2017, v. 66, no. 11, 7938390, p. 1918-1931 How to cite?
Journal: IEEE transactions on computers 
Abstract: Smartphones are getting increasingly high-performance with advances in mobile processors and larger main memories to support feature-rich applications. However, the storage subsystem has always been a prohibitive factor that slows down the pace of reaching even higher performance while maintaining good user experience. Despite today's smartphones are equipped with larger-than-ever main memories, they consume more energy and still run out of memory. But the slow NAND flash based storage vetoes the possibility of swapping - an important technique to extend main memory - and leaves a system that constantly terminates user applications under memory pressure. In this paper, we propose NVM-Swap by revisiting swapping for smartphones with fast, byte-addressable, non-volatile memory (NVM) technologies. Instead of using flash, we build the swap area with NVM, to allow high performance without sacrificing user experience. NVM-Swap supports Lazy Swap-in, which can reduce memory copy operations by giving the swapped out pages a second chance to stay in byte-addressable NVM backed swap area. To avoid fast worn-out of certain NVM, we also propose Heap-Wear, a wear leveling algorithm that distributes writes in NVM more evenly. Evaluation results based on the Google Nexus 5 smartphone show that our solution can effectively enhance smartphone performance and achieve better wear-leveling of NVM.
URI: http://hdl.handle.net/10397/74698
ISSN: 0018-9340
EISSN: 1557-9956
DOI: 10.1109/TC.2017.2711620
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