Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74624
Title: Preparation of SiC/Ge/graphene heterostructure on 4H-SiC(0001)
Authors: Chu, Q
Li, L
Zhu, C
Zang, Y
Lin, S 
Han, Y
Keywords: Chemical vapour deposition
Ge/graphene heterostructure
Microstructure
Raman
SiC
Issue Date: 2018
Publisher: North-Holland
Source: Materials letters, 2018, v. 211, p. 133-137 How to cite?
Journal: Materials letters 
Abstract: Due to the wide bandgap of SiC, SiC-based optoelectronic devices can not be operated by visible (VIS) and near-infrared (NIR) light sources. A promising way to solve this problem is to adopt a SiC/Ge/Graphene heterostructure. The Ge film can be used as VIS-NIR-absorbing layer. As a electrode, graphene also forms a Schottky junction with Ge on 4H-SiC. To form the SiC/Ge/graphene heterostructures, Ge film was prepared on 4H-SiC(0001) by chemical vapor deposition, and then graphene on Cu foil was wet transferred on Ge films. The Ge film on 4H-SiC(0001) has polycrystalline structure and consists of self-assembled submicron Ge islands. The monolayer graphene with a few cracks and wrinkles was transferred on the Ge rough surface. The SiC/Ge/graphene heterostructure with high light absorption in the 500–1200 nm range was prepared on 4H-SiC successfully.
URI: http://hdl.handle.net/10397/74624
ISSN: 0167-577X
EISSN: 1873-4979
DOI: 10.1016/j.matlet.2017.09.112
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