Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74371
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dc.contributor.authorShen, Pen_US
dc.contributor.authorZhang, Hen_US
dc.contributor.authorZhang, Sen_US
dc.contributor.authorFei, Len_US
dc.date.accessioned2018-03-29T07:16:41Z-
dc.date.available2018-03-29T07:16:41Z-
dc.date.issued2017-
dc.identifier.citationApplied surface science, 2017, p. 2en_US
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10397/74371-
dc.description.abstractMesoporous nickel hydroxides Ni(OH)2/graphene nanohybrids were fabricated via heteroassembly of oppositely charged exfoliated Ni(OH)2 and graphite oxide (GO) nanosheets in formamide. The resulting hybrids exhibited a hierarchically porous networks composed of Ni(OH)2 and reduced graphite oxide (rGO) nanosheets. When the atomic ratio of Ni to C in hybrids was optimized to be 0.63, the resulting hybrids exhibited a specific capacitance of 1488F/g at a scan rate of 1mV/s with an excellent cycling stability. Originating from their heterogeneous compositions and hierarchically porous structures, almost all of their Faradic capacitance and non-Faradic capacitance could be employed. The rationally designed Ni(OH)2/rGO nanohybrids with completely engineered interface were used as cathode for asymmetric supercapacitors (ASCs). Optimized Ni(OH)2/rGO//AC ASC exhibited a high capacitance of 102.3F/g. Therefore, a high energy density of 36.7 Wh/Kg and power density of 7.98KW/Kg have been realized. Hence the present Ni(OH)2/rGO hybrids should be promising candidates as high-performance supercapacitors for energy storage and conversion.en_US
dc.description.sponsorshipDepartment of Applied Physicsen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofApplied surface scienceen_US
dc.subjectInterface engineeringen_US
dc.subjectNanohybridsen_US
dc.subjectNanosheetsen_US
dc.subjectNickel hydroxideen_US
dc.subjectSupercapacitoren_US
dc.titleFabrication of completely interface-engineered Ni(OH)2/rGO nanoarchitectures for high-performance asymmetric supercapacitorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage2-
dc.identifier.doi10.1016/j.apsusc.2017.09.145-
dc.identifier.scopus2-s2.0-85029806339-
dc.identifier.eissn1873-5584-
dc.description.validate201802 bcrc-
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