Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/73744
Title: Thickness-dependent bipolar resistive switching behaviors of NiOx films
Authors: Zhu, HX
Huo, JQ
Qiu, XY
Zhang, YY
Wang, RX
Chen, Y 
Wong, CM 
Yau, HM 
Dai, JY 
Keywords: Bipolar resistive switching
NiOx film
Thickness-dependence
Issue Date: 2016
Publisher: Trans Tech Publications Ltd
Source: Materials science forum, 2016, v. 847, p. 131-136 How to cite?
Journal: Materials science forum 
Abstract: Oxygen-rich polycrystalline NiOx films were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOx film presented a clockwise current-voltage loop, while the 60 nm-thick NiOx film achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag ions and drifted oxygen ions in the whole 20 nm-thick NiOx films resulted in the clockwise current-voltage loops. Filamentary conducting paths composed by oxygen vacancies were responsible for the anti-clockwise resistive switching loops of the 60 nm-thick NiOx film.
Description: Chinese Materials Conference on Materials and Technologies for Energy Supply and Environmental Engineering, 2015, 10 - 14 July 2015
URI: http://hdl.handle.net/10397/73744
ISBN: 9783038356561
ISSN: 0255-5476
EISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.847.131
Appears in Collections:Conference Paper

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