Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/68460
Title: Highly conductive nano-structures incorporated in semiconductor nanocomposites
Authors: Leung, WWF 
Yang, LJ 
Issue Date: 24-Mar-2015
Source: US Patent 8,987,706 B2. Washington, DC: US Patent and Trademark Office, 2015. How to cite?
Abstract: The presently claimed invention provides a highly conductive composite used for electric charge transport, and a method for fabricating said composite. The composite comprises a plurality of one-dimensional semiconductor nanocomposites and highly conductive nanostructures, and the highly conductive nanostructures are incorporated into each of the one-dimensional semiconductor nanocomposite. The composite is able to provide fast electric charge transport, and reduce the rate of electron-hole recombination, ultimately increasing the power conversion efficiency for use in solar cell; provide fast electrons transport, storage of electrons and large surface area for adsorption and reaction sites of active molecular species taking part in photocatalytic reaction; enhance the sensitivity of a surface for biological and chemical sensing purposes for use in biological and chemical sensors; and lower the impedance and increase the charge storage capacity of a lithium-ion battery.
URI: http://hdl.handle.net/10397/68460
Rights: Assignee: The Hong Kong Polytechnic Univeristy.
Appears in Collections:Patent

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