Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/68460
PIRA download icon_1.1View/Download Full Text
Title: Highly conductive nano-structures incorporated in semiconductor nanocomposites
Authors: Leung, WWF 
Yang, LJ 
Issue Date: 24-Mar-2015
Source: US Patent 8,987,706 B2. Washington, DC: US Patent and Trademark Office, 2015.
Abstract: The presently claimed invention provides a highly conductive composite used for electric charge transport, and a method for fabricating said composite. The composite comprises a plurality of one-dimensional semiconductor nanocomposites and highly conductive nanostructures, and the highly conductive nanostructures are incorporated into each of the one-dimensional semiconductor nanocomposite. The composite is able to provide fast electric charge transport, and reduce the rate of electron-hole recombination, ultimately increasing the power conversion efficiency for use in solar cell; provide fast electrons transport, storage of electrons and large surface area for adsorption and reaction sites of active molecular species taking part in photocatalytic reaction; enhance the sensitivity of a surface for biological and chemical sensing purposes for use in biological and chemical sensors; and lower the impedance and increase the charge storage capacity of a lithium-ion battery.
Rights: Assignee: The Hong Kong Polytechnic Univeristy.
Appears in Collections:Patent

Files in This Item:
File Description SizeFormat 
us8987706b2.pdf2.84 MBAdobe PDFView/Open
Show full item record

Page views

89
Last Week
0
Last month
Citations as of Apr 21, 2024

Downloads

38
Citations as of Apr 21, 2024

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.