Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/68422
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorOr, SW-
dc.creatorChan-Wong, HLW-
dc.date.accessioned2017-08-22T05:55:00Z-
dc.date.available2017-08-22T05:55:00Z-
dc.identifier.urihttp://hdl.handle.net/10397/68422-
dc.language.isoenen_US
dc.rightsAssignee: The Hong Kong Polytechnic Univeristy.en_US
dc.titleMagnetoelectric devices and methods of using sameen_US
dc.typePatenten_US
dc.description.otherinformationUS7199495; US7199495 B2; US7199495B2; US7,199,495; US 7,199,495 B2; 7199495; Appl. No. 10/814,265en_US
dcterms.abstractThe operational frequency of existing magnetoelectric materials having metallic or ceramic magnetostrictive materials and ceramic piezoelectric materials may be limited to a few kilohertz due to the presence of eddy-current losses in the metallic magnetostrictive phase. Further, these materials may be difficult to machine and fabricate due to their brittleness. Additionally, it may be difficult to tailor and optimize the properties (i.e., magnetoelectric voltage coefficient .alpha..sub.E, etc.) of the devices. This invention provides a magnetoelectric element including at least one set of alternative piezoelectric layer and magnetostrictive composite layer. The magnetostrictive composite layer includes at least one magnetostrictive material dispersed in first concentrated zones within a first polymer matrix, wherein all of said concentrated zones are orientated along a first direction. It is found that the conversion efficiency (i.e., .alpha..sub.E) varies in accordance with applied magnetic control field H.sub.control.-
dcterms.bibliographicCitationUS Patent 7,199,495 B2. Washington, DC: US Patent and Trademark Office, 2007.-
dcterms.issued2007-04-03-
dc.description.countryUS-
dc.identifier.rosgroupidr31343-
dc.description.ros2006-2007 > Other Outputs > Patents granted-
dc.description.oapublished_final-
Appears in Collections:Patent
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