Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/68301
Title: Improved electrical performance of multilayer MoS2 transistor with NH3-annealed ALD HfTiO gate dielectric
Authors: Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM 
Keywords: Annealing
Electron field mobility
FETs
High-k gate dielectric
Multilayer MoS2
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2017, v. 64, no. 3, p. 1020-1025 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: The carrier mobility of MoS2 transistors can be greatly improved by the screening effect of high-k gate dielectric. Therefore, in this paper, atomic layer deposited HfTiO annealed in different ambients (N-2, O-2, and NH3) is used to replace SiO2 as gate dielectric for fabricating back-gated multilayer MoS2 transistors. As a result, excellent electrical properties are achieved for the sample annealed in NH3 at 400 degrees C for 10 min: the field-effect mobility of 31.1 cm(2)/(V . s) and the subthreshold swing of 100 mV/decade, which are six times higher and three times smaller compared with that of the control sample, respectively. The enhanced electrical performance should be associatedwith the passivation effectsof theNH(3) annealing, which reduces defective states in the HfTiO dielectric and at/near the HfTiO/MoS2 interface. The capacitance equivalent thickness of the gate dielectric (HfTiO) is only 6.79 nm, which is quite small for back-gatedMoS(2) transistor and is conducive to the scaling down of the device.
URI: http://hdl.handle.net/10397/68301
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2017.2650920
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