Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/67065
Title: Improved performance of HEMTs with BN as heat dissipation
Authors: Lin, ZY
Liu, CR
Zhou, CJ
Chai, Y 
Zhou, MJ
Pei, Y
Keywords: High electron mobility transistor
Boron nitride
Thermal management
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: 7th IEEE International Nanoelectronics Conference (INEC) 2016, May 9-11, 2016, Chengdu, People's Republic of China How to cite?
URI: http://hdl.handle.net/10397/67065
ISBN: 978-1-4673-8969-3
Appears in Collections:Conference Paper

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