Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/66983
Title: Electrical performance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Authors: Wen, M
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM 
Keywords: Multilayer MoS2
Field-effect transistor
Anneal ambient
Mobility
Conduction band offset
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, 2016, 7785200, p. 17-20 How to cite?
Abstract: Electrical performance of MOS2 transistor, especially carrier mobility, can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, Ti is incorporated into HfO2 to form HfTiO dielectric with a higher permittivity, which leads to further enhancement of the screening effect and thus carrier mobility. The effects of annealing ambient (N2, O2 and NH3) on the electrical performance of ALD HfTiO back-gated multilayer M0S2 transistor are investigated, and a highest mobility of 31.1 cm2/(V-s) is achieved for the NH3-annealed sample. However, different from the HfO2 gated MOS2 transistor, the HfTiO gated device exhibits larger off current and subthreshold swing. This is probably attributed to a smaller conduction-band offset between HfTiO and MOS2.
Description: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, 3-5 August 2016
URI: http://hdl.handle.net/10397/66983
ISBN: 978-1-5090-1830-7
DOI: 10.1109/EDSSC.2016.7785200
Appears in Collections:Conference Paper

Access
View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

61
Last Week
0
Last month
Citations as of Dec 3, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.