Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/66983
Title: Electrical performance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Authors: Wen, M
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
Keywords: Multilayer MoS2
Field-effect transistor
Anneal ambient
Mobility
Conduction band offset
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Aug 3-5, 2016, Univ Hong Kong, Hong Kong, People's Republic of China, p. 17-20 How to cite?
URI: http://hdl.handle.net/10397/66983
ISBN: 978-1-5090-1830-7
Appears in Collections:Conference Paper

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