Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/66341
Title: Sintering temperature dependence of thermoelectric performance in CuCrSe2 prepared via mechanical alloying
Authors: Yan, YC
Guo, LJ
Zhang, Z
Lu, X
Peng, KL
Yao, W
Dai, JY 
Wang, GY
Zhou, XY
Keywords: CuCrSe2
Single phase
Layered structure
PLEC
Issue Date: 2017
Publisher: Pergamon Press
Source: Scripta materialia, 15 Jan. 2017, v. 127, p. 127-131 How to cite?
Journal: Scripta materialia 
Abstract: CuCrSe2 compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe2 single phase completely free of a metallic secondary phase CuCr2Se4. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe2 compound. A maximum ZT value over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K.
URI: http://hdl.handle.net/10397/66341
ISSN: 1359-6462
EISSN: 1872-8456
DOI: 10.1016/j.scriptamat.2016.09.016
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