Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/66283
Title: Improved characteristics for OTFT with HfO2 gate dielectric by using chlorinated indium tin oxide gate electrode
Authors: Tang, WM
Helander, MG
Greiner, MT
Lu, ZH
Ng, WT
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, 2016, 7785284, p. 365-368 How to cite?
Abstract: OTFTs on indium tin oxide (ITO) coated glass with high-k material HfO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with chlorine pretreatment of ITO has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without chlorine treated sample. This demonstrates that the surface chlorination treatment on ITO gate electrode is a simple, low cost, low-temperature, and effective way to improve the OTFT performance.
Description: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, 3-5 August 2016
URI: http://hdl.handle.net/10397/66283
ISBN: 9781509018307
DOI: 10.1109/EDSSC.2016.7785284
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