Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/66282
Title: Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by la doping
Authors: Liu, Y
Lai, PT
Tang, WM
Keywords: Gas sensor
Hydrogen
Schottky diode
SiC
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, 2016, 7785277, p. 338-341 How to cite?
Abstract: An investigation on the electrical and hydrogen sensing properties of a Schottky diode based on a Pd/lanthanum-tungsten oxide/SiC structure is presented. Various amounts of lanthanum are doped into WO3 on SiC substrate by using different RF sputtering powers. The oxide surface morphology is observed by AFM. The current-voltage characteristics and hydrogen sensing performance including change in barrier height and sensitivity are examined from 100 °C to 250 °C. At 150 °C, the La-doped WO3-based sensor has a maximum sensitivity of 25 upon exposure to 10,000 ppm hydrogen in air atmosphere. The results indicate that the presence of lanthanum substantially improves the hydrogen sensitivity of the WO3 Schottky diode.
Description: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, 3-5 August 2016
URI: http://hdl.handle.net/10397/66282
ISBN: 9781509018307
DOI: 10.1109/EDSSC.2016.7785277
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