Please use this identifier to cite or link to this item:
Title: Hydrogen sensor based on pentacene thin-film transistor
Authors: Li, BC
Lai, PT
Tang, WM 
Keywords: Flexiblity
Hydrogen sesnors
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, 2016, 7785309, p. 468-471 How to cite?
Abstract: Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.
Description: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, 3-5 August 2016
ISBN: 9781509018307
DOI: 10.1109/EDSSC.2016.7785309
Appears in Collections:Conference Paper

View full-text via PolyU eLinks SFX Query
Show full item record


Last Week
Last month
Citations as of Jan 6, 2019

Page view(s)

Last Week
Last month
Citations as of Jan 13, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.