Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/66281
Title: Hydrogen sensor based on pentacene thin-film transistor
Authors: Li, B
Lai, PT
Tang, WM
Keywords: Flexiblity
HfLaO
Hydrogen sesnors
OTFT
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, 2016, 7785309, p. 468-471 How to cite?
Abstract: Hydrogen sensor based on pentacene organic thin-film transistor (OTFT) with palladium (Pd) source and drain electrodes and high-k HfLaO gate dielectric is fabricated. The sensor exhibits clear change in drain current when exposed to different H2 concentrations in air at room temperature. Rapid, reversible and concentrate-dependent H2 response of the OTFT is observed when the device is exposed to various H2 concentrations ranging from 200 ppm to 17,000 ppm. In a hydrogen-containing ambient, the device exhibits an obvious decrease in drain current because after absorbing hydrogen, the Pd source/drain electrodes expand to increase the contact resistance of the device. To support the physical mechanism of hydrogen response of the OTFT with Pd electrodes, a control sample with gold (Au) as source and drain electrodes is also fabricated for comparison.
Description: 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, 3-5 August 2016
URI: http://hdl.handle.net/10397/66281
ISBN: 9781509018307
DOI: 10.1109/EDSSC.2016.7785309
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