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Title: High thermally conductive and electrically insulating 2D boron nitride nanosheet for efficient heat dissipation of high-power transistors
Authors: Lin, ZY
Liu, CR
Chai, Y 
Keywords: 2D materials
Hexagonal boron nitride
High electron mobility transistors
Thermal management
Issue Date: 2016
Publisher: Institute of Physics Publishing
Source: 2D Materials, 2016, v. 3, no. 4, 41009 How to cite?
Journal: 2D Materials 
Abstract: High-power transistors suffer greatly from inefficient heat dissipation of the hotspots, which elevate the local temperature and significantly degrade the performance and reliability of the high-power devices. Although various thermal management methods at package-level have been demonstrated, the heat dissipation from non-uniform hotspots at micro/nanoscale still persist in the high power transistors. Here, we develop a method for local thermal management using thermally conductive and electrical insulating few-layer hexagonal boron nitride (h-BN) as heat spreaders and thick counterpart as heat sinks. The electrically insulating characteristic of h-BN nanosheet allows it to be intimately contacted with the hotspot region that is located at the gate electrode edge near the drain side of a high-electron-mobility transistor (HEMT). The high thermal conductivity of h-BN nanosheet, which is quantitatively measured by Raman thermography, reduces the temperature of the hotspot by introducing an additional heat transporting pathway. Our DC and radio-frequency characterizations of the HEMT show the improvement of saturation current, cut-off frequency and maximum oscillation frequency. The finite element simulations show a temperature decrease of ∼32°C at the hotspot with the use of h-BN nanosheet. This method can be further extended for the micro/nanoscale thermal management of other high-power devices.
EISSN: 2053-1583
DOI: 10.1088/2053-1583/3/4/041009
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