Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65685
Title: Impurity-limited quantum transport variability in magnetic tunnel junctions
Authors: Zhuang, J
Wang, Y
Zhou, Y
Wang, J
Guo, H
Keywords: First principles
Megnetic tunnel junctions
NEGF-DFT
Tunnel magnetoresistance
Issue Date: 2017
Publisher: Higher Education Press
Source: Frontiers of physics, 2017, v. 12, no. 4, 127304 How to cite?
Journal: Frontiers of physics 
Abstract: We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel magnetoresistance ratio (TMR) and the average values and variances of the currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our firstprinciples calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of spintronic devices, which is imperative for high-volume production.
URI: http://hdl.handle.net/10397/65685
ISSN: 2095-0462
EISSN: 2095-0470
DOI: 10.1007/s11467-016-0644-8
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