Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65654
Title: Crystal engineering for low defect density and high efficiency hybrid chemical vapor deposition grown perovskite solar cells
Authors: Ng, A
Ren, Z
Shen, Q
Cheung, SH
Gokkaya, HC
So, SK
Djuriši?, AB
Wan, Y
Wu, X
Surya, C
Keywords: Cooling rates
Crystallization
defects
Growth ambient
Hybrid chemical vapor deposition
Passivation
Perovskites
Solar cells
Issue Date: 2016
Publisher: American Chemical Society
Source: ACS applied materials and interfaces, 2016, v. 8, no. 48, p. 32805-32814 How to cite?
Journal: ACS applied materials and interfaces 
Abstract: Synthesis of high quality perovskite absorber is a key factor in determining the performance of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth technique can provide high level of versatility and repeatability to ensure the optimal conditions for the growth of the perovskite films as well as potential for batch processing. It is found that the growth ambient and degree of crystallization of CH3NH3PbI3 (MAPI) have strong impact on the defect density of MAPI. We demonstrate that HCVD process with slow postdeposition cooling rate can significantly reduce the density of shallow and deep traps in the MAPI due to enhanced material crystallization, while a mixed O2/N2 carrier gas is effective in passivating both shallow and deep traps. By careful control of the perovskite growth process, a champion device with power conversion efficiency of 17.6% is achieved. Our work complements the existing theoretical studies on different types of trap states in MAPI and fills the gap on the theoretical analysis of the interaction between deep levels and oxygen. The experimental results are consistent with the theoretical predictions.
URI: http://hdl.handle.net/10397/65654
ISSN: 1944-8244
EISSN: 1944-8252
DOI: 10.1021/acsami.6b07513
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