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Title: Seed-assisted growth of single-crystalline patterned graphene domains on hexagonal boron nitride by chemical vapor deposition
Authors: Song, X
Gao, T
Nie, Y
Zhuang, J
Sun, J
Ma, D
Shi, J
Lin, Y
Ding, F 
Zhang, Y
Liu, Z
Keywords: Characterizations
Chemical vapor deposition
Controllable growth
Graphene and hexagonal boron nitride heterostructures
Seed-assisted growth
Issue Date: 2016
Publisher: American Chemical Society
Source: Nano letters, 2016, v. 16, no. 10, p. 6109-6116 How to cite?
Journal: Nano letters 
Abstract: Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that ∼85.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as-constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next-generation graphene-based electronics.
ISSN: 1530-6984
EISSN: 1530-6992
DOI: 10.1021/acs.nanolett.6b02279
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