Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/64284
Title: MCSSim : a memory channel storage simulator
Authors: Chen, RH
Shao, ZL 
Yang, CL
Li, T
Keywords: NAND circuits
DRAM chips
Flash memories
Integrated circuit design
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: 2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC), Macau, China, January 25-28, 2016, p. 153-158 How to cite?
Abstract: Recently, NVDIMM (Non-Volatile Dual In-line Memory Module) is being widely supported by leading hardware design companies, such as IBM. Nevertheless, existing efforts largely focus on NVDIMM specification and fabrication issues, and the potential performance gains brought by NVDIMM are not fully investigated. In this paper, we present a NVDIMM-based simulator called MCSSim to help study the memory channel storage techniques. MCSSim is a cycle-accurate simulator that is elaborated with the consideration of differences between the memory channel interface and the NAND flash memory features. MCSSim is also implemented with the DRAMSim2 [31] simulator thus enabling the simulation of a variety of hybrid memory systems by combining of DRAM DIMM and NVDIMM. We have done some experiments with MCSSim, and the experimental results show the effectiveness of the proposed simulator.
URI: http://hdl.handle.net/10397/64284
ISBN: 978-1-4673-9569-4 (electronic)
978-1-4673-9568-7 (CD-ROM)
DOI: 10.1109/ASPDAC.2016.7428004
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