Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/63635
Title: Contact resistance and reliability of 40 nm carbon nanotube vias
Authors: Vyas, AA
Yang, CY
Wang, P
Zhou, CJ
Chai, Y 
Keywords: Interconnects
Carbon nanotubes
Contact resistance
Metallization
Issue Date: 2016
Publisher: Institute of Electrical and Electronics Engineers
Source: 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), Jose, California, USA, 23-26 May 2016, p. 203-205 How to cite?
Abstract: Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.
URI: http://hdl.handle.net/10397/63635
ISBN: 978-1-5090-0386-0 (electronic)
978-1-5090-0385-3 (USB)
978-1-5090-0387-7 (print on demand (PoD))
DOI: 10.1109/IITC-AMC.2016.7507732
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