Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/63381
Title: Synthesis and properties of aluminum nitride nanostructures
Authors: Lau, SP 
Ji, XH
Issue Date: 2012
Source: In GC Yi (Ed.), Semiconductor nanostructures for optoelectronic devices: processing, characterization and applications, p. 103-136. Berlin ; New York: Springer, 2012
Abstract: Aluminum nitride (AlN) is a wide band gap semiconductor that has potential applications in both deep ultraviolet (UV) optical devices and high-power electronics devices. We review the recent development of one-dimensional (1D) AlN nanostructures. Various synthesis strategies for AlN nanostructures are presented. We pay particular attention in the doping of AlN nanostructures. The magnetic and optical properties of the AlN nanostructures are studied in detail. The future prospect of 1D AlN nanostructures for deep UV light-emitting diodes is presented.
Publisher: Springer
ISBN: 9783642224805 (electronic bk.)
3642224806 (electronic bk.)
9783642224799 (print)
DOI: 10.1007/978-3-642-22480-5_4
Appears in Collections:Book Chapter

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