Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/63202
Title: Interface effect on the photovoltaic properties of BiFeO₃
Authors: Li, Xing
Advisors: Huang, H. T. (AP)
Choy, S. H. (AP)
Keywords: Photovoltaic effect.
Piezoelectric materials.
Issue Date: 2016
Publisher: The Hong Kong Polytechnic University
Abstract: Ferroelectric-photovoltaic (FePV) devices employing a homogeneous ferroelectric material as the light absorbing layer, have been investigated intensively during the past decades. The physical mechanism governing the FePV effect is distinctly different from that of a typical p-n junction type photovoltaic (PV) effect, whose open-circuit voltage is limited by the bandgap of the light absorbing material. Therefore, FePV material is regarded as the potential candidate for above-bandgap solar cells. Among all the FePV materials, BiFeO₃ (BFO), possessing simultaneous ferroelectric and antiferromagnetic orders at room temperature, is most widely studied in the last decade. In this thesis, systematic experimental work has been carried out to investigate the FePV effect in BFO. First, the influence of secondary phase on FePV of BFO thin film was examined. Pulsed laser deposition (PLD) was used to fabricate epitaxial BFO thin films. Three different targets were used for laser ablation and different ablation parameters (oxygen pressure and laser pulse frequency) were tried to obtain phase pure BFO thin film. Our results demonstrated that the photocurrent and photoconductivity of BFO thin films are closely related to Bi₂O₃ secondary phase and bismuth vacancies. A large photocurrent density of 12 mA/cm², a large remnant polarization of 60 μC/cm² and good switching behaviour were observed in optimized epitaxial BFO films.
Second, the influence of metal-semiconductor interface effect on BFO FePV was studied. Titanium (Ti) and gold (Au) metals are used as symmetric in-plane electrodes, respectively, on optimized BFO thin films. Since the work functions of Ti and Au are different, which are above and beneath the Fermi level of BFO, respectively, Ohmic contact is formed at the Ti/BFO interface and Schottky contact is formed at the Au/BFO interface. The contact types were confirmed by Kelvin probe force microscopy. The photovoltaic behaviours of these two types of electrode BFO thin films were performed and the photocurrent is larger in a BFO thin film with an Ohmic contact. Last, but not least, the strain effect on BFO FePV behaviour was studied. Epitaxial BFO thin films are deposited on LaAlO₃ (LAO) [1 0 0] and 0.67Pb(Mg₁/₃Nb₂/₃)O3-0.33PbTiO₃ (PMN-PT) [1 1 1] substrates. No obvious increase in short circuit photo-current was detected in BFO/LAO sample which has a tetragonal-like BFO phase, as confirmed by Raman spectroscopy. However, large photoconductivity at large voltage bias was obtained. A small but non-trivial photovoltaic effect was observed in BFO/PMN-PT sample with a rhombohedral structure. It is concluded that the FePV effect is also closely related to the symmetry group of the lattice structure. A prominent photo-response was observed in strain-free electrospun BFO nanofibers, which may have potential applications due to the flexible nature of the nanofibers.
Description: PolyU Library Call No.: [THS] LG51 .H577M AP 2016 Li
139 pages :color illustrations
URI: http://hdl.handle.net/10397/63202
Rights: All rights reserved.
Appears in Collections:Thesis

Files in This Item:
File Description SizeFormat 
b29011838_link.htmFor PolyU Users208 BHTMLView/Open
b29011838_ira.pdfFor All Users (Non-printable)4.72 MBAdobe PDFView/Open
Show full item record

Page view(s)

74
Last Week
5
Last month
Checked on Sep 18, 2017

Download(s)

28
Checked on Sep 18, 2017

Google ScholarTM

Check



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.