Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/62288
Title: WS2 nanotube formation by sulphurization : effect of precursor tungsten film thickness and stress
Authors: Ng, SM
Wong, HF
Wong, WC
Tan, CK
Choi, SY
Mak, CL 
Li, GJ
Dong, QC
Leung, CW 
Keywords: Transition metal dichalcogenides
Tungsten disulphide
Nanotubes
Patterning
Issue Date: 2016
Publisher: Elsevier
Source: Materials chemistry and physics, 2016, v. 181, p. 352-358 How to cite?
Journal: Materials chemistry and physics 
Abstract: Transition metal dichalcogenides can exhibit as 2-dimensional layers, 1-dimensional nanotubes or 0-dimensional quantum dot structures. In general, dichalcogenide nanotubes are grown under stringent conditions, using high growth temperatures with tedious processes. Here, we report the controlled formation of tungsten disulphide (WS2) nanostructures by manipulating the precursor film thickness, followed by a direct sulphurization process. WS2 nanotubes were formed by ultra-thin tungsten precursor films, while particle-like WS2 were obtained from thicker tungsten films under identical sulphurization conditions. To elucidate the origin of WS2 nanostructure formation, micron-sized tungsten film tracks were prepared, and such patterned films were found to suppress the growth of WS2 nano tubes. We attribute the suppression of nanotube formation to the relieving of film stress in patterned precursor films.
URI: http://hdl.handle.net/10397/62288
ISSN: 0254-0584
EISSN: 1879-3312
DOI: 10.1016/j.matchemphys.2016.06.069
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