Please use this identifier to cite or link to this item:
Title: Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Authors: Wen, M
Xu, J
Liu, L
Lai, PT
Tang, WM 
Issue Date: 2016
Publisher: Institute of Physics Publishing
Source: Applied physics express, 2016, v. 9, no. 9, 095202 How to cite?
Journal: Applied physics express 
Abstract: Atomic layer deposited HfO2 annealed in different ambients (N2, O2, and NH3) is used to replace SiO2 as a gate dielectric for fabricating back-gated multilayer MoS2 transistors. Excellent electrical properties such as a mobility of 15.1cm2/(Vs), an on/off ratio exceeding 107, and a hysteresis of 0.133V are achieved for samples annealed in NH3 at 400 °C for 10 min. This is caused by the NH3 annealing passivation effects that reduce defective states in the HfO2 dielectric and the interface. The capacitance equivalent thickness is only 7.85 nm, which is quite small for a back-gated MoS2 transistor and is conducive to the scaling down of the device.
ISSN: 1882-0778 (print)
1882-0786 (online)
DOI: 10.7567/APEX.9.095202
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

Last Week
Last month
Checked on Aug 20, 2017

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.