Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/62154
Title: The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective
Authors: Deng, X
Zeng, J
Si, M
Lu, W
Issue Date: 2016
Publisher: North-Holland
Source: Physics letters. Section A : general, atomic and solid state physics, 2016, v. 380, no. 41, p. 3384-3388 How to cite?
Journal: Physics letters. Section A : general, atomic and solid state physics 
Abstract: A theoretical model is presented that reveals the mechanism of spontaneous boron doping of graphene and is consistent with the microwave plasma experiment choosing trimethylboron as the doping source (Tang et al. (2012) [19]). The spontaneous boron doping originates from the synergistic effect of B and other groups (C, H, CH, CH2 or CH3) decomposing from trimethylboron. This work successfully explains the above experimental phenomenon and proposes a novel and feasible method aiming at B doping of graphene. The mechanism presented here may be also suitable for other two-dimensional carbon-based materials.
URI: http://hdl.handle.net/10397/62154
ISSN: 0375-9601
DOI: 10.1016/j.physleta.2016.08.002
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