Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/62117
Title: Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment
Authors: Jelenković, EV
To, S 
Sundaravel, B
Xiao, G
Huang, H
Issue Date: 2016
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2016, v. 122, no. 7, 708 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm−2, 2 × 1016 cm−2 and 3 × 1016 cm−2, respectively. In this way, low hydrogen atom–low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom–high defect concentration was obtained at silicon depth of ~0.8–1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in <110> and <100> silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.
URI: http://hdl.handle.net/10397/62117
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-016-0227-0
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